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800V Power Modules for Electric Vehicles – A Comparison Among 2L-IGBT, 2L-SiC MOSFET and 3L-IGBT


报告时间:2022-04-26, 15:00 – 16:00 (GMT+8)

报告地点:Tencent Meeting 603-853-406

报告人:Dr.-Ing. Michael Schubert


Dr.-Ing. Michael Schubert received the Dipl.-Ing. and Dr.-Ing. degrees in electrical engineering from RWTH Aachen University, Aachen, Germany, in 2012 and 2019, respectively.

In 2012, he joined the Institute for Power Electronics and Electrical Drives (ISEA), RWTH Aachen University. He became a Group Leader of the research group Electrical Drives in 2014 and a Chief Engineer of the institute in 2018. His research interests include the control of electrical drives, power electronic systems, and observer-based parameter adaptation.

Today, Dr. Schubert is with Leadrive Technology where he is leading the research and development activities of the German subdivision in Aachen


The motor control unit (MCU) in the powertrain of electric vehicles is the major drivetrain component which is responsible for ensuring highest efficiency, maximum safety, and good driving experience. In today’s broadly available EVs, the voltage level of 400V is mostly applied. The continuous improvement of 600V IGBT chips have led to high-efficient 600V IGBT power modules which are now the standard in the automotive industry. However, with the goal of faster charging, higher battery voltages become more attractive. For this purpose, 800V power modules IGBTs with a blocking voltage of 1200V are required, which have not yet experienced the same degree of optimization compared to 600V chips. This makes 800V SiC MOSFETs increasingly attractive in this voltage range. Alternatively, the 600V IGBT could be used in a 3-level NPC topology to achieve a higher voltage range. In this talk, an in-depth comparison of these three approaches will be given. Advantages and disadvantages of each technology will be discussed along with experimental results. 

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